*-* Dual-Metal Gate Technology for Deep-Submicron CMOS Transistors
نویسندگان
چکیده
Dual-metal gate CMOS devices with rapid-thermal chemicalvapor deposited (RTCVD) Si3N4 gate dielectric were fabricated using a self-aligned process. The gate electrodes are Ti and MO for the Nand PMOSFET respectively. Carrier mobilities are comparable to that predicted by the universal mobility model for Si02. C-V characteristics show good agreement with a simulation that takes quantum-mechanical effects into account, and clearly display the advantage of metal over poly-Si gates.
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